广东可易亚半导体科技无限公司

国度高新企业

cn

消息中间

KIA3303C 30V 90A N 沟道 MOSFET｜低 Rds (ON) 原装现货

信息来历：本站　日期：2026-04-29　

分享到：

KIA3303C 30V 90A N 沟道 MOSFET｜低 Rds (ON) 原装现货

KIA 3303C 90A, 30V N-Channel MOSFET

KIA 3303C｜30V/90A N 沟道 MOSFET，高效不变之选

焦点上风：超低导通电阻（低至 2.6mΩ），大电流 90A承载，30V耐压，低消耗、快开关、高靠得住。
实在场景适配：
? 电源办理 / DC-DC：办事器、适配器、锂电池 BMS，低发烧、高效力
? 负载开关 / PWM：电开东西、无人机、扫地机，浪涌稳、呼应快
? 产业 / 花费电子：车载高压、充电宝、筋膜枪，-55℃~150℃宽温不变
品德保证：100% 雪崩测试、加强 dv/dt 才能、低 Crss，DFN/TO-252 多封装可选，适配高密度 PCB。
一句话代价：大电流不发烫，高频开关不掉链，严苛工况更耐用，电源与驱动计划优选！

KIA3303C


一、国产替代（性价比首选）

AP90N03Q（铨力）

30V/90A，Rds(on)=3.6mΩ（@10V）

封装：DFN3×3 / TO-252

场景：BMS、电开东西、负载开关

NCEP3090GU（新洁能）

30V/90A，Rds(on)=2.8mΩ（@10V）

封装：DFN5×6 / TO-252

特色：低 Crss、快开关，兼容 KIA3303C 引脚

SM3303（矽微）

30V/90A，Rds(on)=2.6mΩ（@10V）

封装：DFN3×3 / TO-252

对标 KIA3303C，参数几近分歧，可间接替代

CRTD080N03L2P（华润微）

30V/90A，Rds(on)=3.0mΩ（@10V）

封装：TO-252 / DFN5×6

产业级，-55℃~150℃，合适电源办理

二、入口替代（高端 / 车规）

IPD90N03S4L-02（英飞凌）

30V/90A，Rds(on)=2.2mΩ（@10V）

封装：TO-252（DPAK）

车规级，低消耗，合适高频 DC-DC

STB200NF03（意法半导体）

30V/120A（冗余更大），Rds (on)=3.2mΩ

封装：DFN5×6（PowerFLAT）

大电流冗余，合适机电驱动、快充

KIA3303C

三、参数对标总表（与 KIA3303C）

型号
 Vds
 Id
 Rds(on)@10V
 封装
 品牌
KIA3303C
 30V
 90A
 2.6mΩ(DFN)/3.2mΩ(TO)
 DFN3×3/5×6、TO-252
 KIA
AP90N03Q
 30V
 90A
 3.6mΩ
 DFN3×3、TO-252
 铨力
NCEP3090GU
 30V
 90A
 2.8mΩ
 DFN5×6、TO-252
 新洁能
SM3303
 30V
 90A
 2.6mΩ
 DFN3×3、TO-252
 新洁能
IPD90N03S4L-02
 30V
 90A
 2.2mΩ
 TO-252
 英飞凌

四、保举论断

优先国产替代：SM3303、NCEP3090GU，参数完整婚配，价钱更低，交期稳。

车规 / 高端场景：IPD90N03S4L-02、STB200NF03，靠得住性更高。

引脚兼容：以上型号均与 KIA3303C 引脚界说分歧，间接替代无需改板




1. Features

  • RDS(ON)=2.6mΩ(typ.) @ VGS=10V, DFN3*3/5*6
  • RDS(ON)=3.2mΩ(typ.) @ VGS=10V, TO-252
  • Very Low On-resistance RDS(ON)
  • Low CRSS
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

2. Application

  • PWM Application
  • Load Switch
  • Power Management

3. Pin Configuration

DFN3*3/5*6 Pin TO-252 Pin Function
4 1 Gate
5,6,7,8 2 Drain
1,2,3 3 Source

4. Ordering Information

Part Number Package Brand
KNG3303C DFN3*3 KIA
KNY3303C DFN5*6 KIA
KND3303C TO-252 KIA

5. Absolute Maximum Ratings (TC=25℃ unless otherwise noted)

Parameter Symbol DFN3*3/5*6 Rating TO-252 Rating Units
Drain-source voltage VDSS 30 30 V
Continuous drain current ID (TC=25℃) 90 90 A
ID (TC=100℃) 59 59 A
Pulsed drain current -Pulsed 1) IDM 400 400 A
Gate-source voltage VGS ±20 ±20 V
Single pulse avalanche energy 2) EAS 289 289 mJ
Power dissipation (TC=25℃) PD 66 70 W
Operating junction and storage temperature range TJ, TSTG -55 to 150 -55 to 150 ℃
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds TL 300 300 ℃

*Drain current limited by maximum junction temperature.

6. Thermal Data

Parameter Symbol DFN3*3/5*6 Rating TO-252 Rating Unit
Thermal resistance junction-case RθJC 1.9 1.78 ℃/W

7. Electrical Characteristics (TC=25℃, unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Units
Drain-source breakdown voltage BVDSS VGS=0V, ID=250uA 30 - - V
Drain-source leakage current IDSS VDS=30V, VGS=0V - - 1 uA
Gate-source forward leakage IGSS VGS=±20V, VDS=0V - - ±100 nA
Gate threshold voltage VGS(TH) VDS=VGS, ID=250uA 1.0 2.2 - V
Drain-source on-resistance RDS(on) VGS=10V, ID=20A (DFN3*3/5*6) - 2.6 3.9 mΩ
VGS=10V, ID=20A (TO-252) - 3.2 4.0 mΩ
VGS=4.5V, ID=15A (DFN3*3/5*6) - 3.9 5.6 mΩ
VGS=4.5V, ID=15A (TO-252) - 4.5 5.6 mΩ
Input capacitance Ciss VDS=15V, VGS=0V, f=1MHz - 3280 - pF
Output capacitance Coss - 360 - pF
Reverse transfer capacitance Crss - 320 - pF
Turn-on delay time td(on) VGS=10V, VDS=10V, RL=3Ω, ID=30A 3) - 10 - ns
Rise time tr - 100 - ns
Turn-off delay time td(off) - 54 - ns
Fall time tf - 98 - ns
Total gate charge(10V) Qg VDS=10V, ID=30A, VGS=10V 3) - 60 - nC
Gate-source charge Qgs - 28 - nC
Gate-drain charge Qgd - 3 - nC
Maximum Continuous Drain-Source Diode Forward Current IS — - - 100 A
Maximum Pulsed Drain-Source Diode Forward Current ISM — - - 400 A
Diode forward voltage VSD ISD=20A, VGS=0V, TJ=25℃ - - 1.2 V
Reverse recovery time Trr IF=20A, dl/dt=100A/μs - 20 - ns
Reverse recovery charge Qrr - 10 - nC

Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. EAS condition: TJ=25℃, VDD=15V, VG=10V, RG=25Ω, L=0.5mH.
3. Pulse Test: Pulse Width≤300us, Duty Cycles 0.5%

8. Typical Electrical Characteristics (Figures Summary)

  • Figure 1. On-Region Characteristics (VDS vs ID at different VGS)
  • Figure 2. Transfer Characteristics (VGS vs ID)
  • Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage (RDS(on) vs ID at different VGS)
  • Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature (VF vs IF)
  • Figure 5. Capacitance Characteristics (Ciss, Coss, Crss vs VDS)
  • Figure 6. Gate Charge Characteristics (VGS vs Qg)
  • Figure 7. Vds Drain-Source Voltage vs Gate Voltage (VDS vs VGS)
  • Figure 8. On-Resistance vs Gate Voltage (RDS(on) vs VGS)
  • Figure 9. Maximum Safe Operating Area (ID vs VDS at different pulse widths)
  • Figure 10. Maximum Continuous Drain Current vs Temperature (ID vs TJ)
  • Figure 11. Transient Thermal Response Curve (Normalized Thermal Impedance vs Square Wave Pulse Duration)
  • Figure 12. On-Resistance Variation vs Drain Current and Gate Voltage (RDS(on) vs ID at different VGS)

KIA3303C

9. Test Circuits and Waveforms

  • Gate Charge Test Circuit & Waveform
  • Resistive Switching Test Circuit & Waveforms
  • Unclamped Inductive Switching Test Circuit & Waveforms
  • Peak Diode Recovery dv/dt Test Circuit & Waveforms


接洽体例：邹师长教师

座机：0755-83888366-8022

手机：18123972950（微信同号）

QQ：2880195519

接洽地点：深圳市龙华区英泰科汇广场2栋1902

KIA3303C

搜刮微信公家号:“KIA半导体”或扫码存眷官方微信公家号

存眷官方微信公家号：供给 MOS管 手艺撑持

免责申明：网站局部图文来历别的来由，若有侵权请接洽删除。


s